Injection locking and noise reduction of resonant tunneling diode terahertz oscillator
نویسندگان
چکیده
We studied the injection-locking properties of a resonant-tunneling-diode terahertz oscillator in small-signal injection regime with frequency-stabilized continuous THz wave. The linewidth emission spectrum dramatically decreased to less than 120 mHz (half width at half maximum) from 4.4 MHz free running state as result locking. experimentally determined amplitude voltage antenna caused by injected locking range was proportional and consistent Adler’s model. While increasing amplitude, we observed decrease noise component power spectrum, which manifests free-running state, an alternative increase injection-locked component. had same threshold small 5 × 10?4 oscillation amplitude. This behavior can be qualitatively explained Maffezzoni’s model reduction general limit-cycle oscillators.
منابع مشابه
Quantitative simulation of a resonant tunneling diode
Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...
متن کاملStudy of Various Tuning properties and Injection Locking of Resonant-cap IMPATT oscillator
A coherent study of tuning properties of resonantcap IMPATT oscillator at Ka-band has been carried out by mechanical and electronic means. It is experimentally observed that output power of IMPATT oscillator passes through a maximum, with an optimum combination of cap diameter and cap height. An empirical relation is obtained between cap diameter and wavelength of the optimised resonant cap osc...
متن کاملQuantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode
We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than 10 cm , which is consis...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: APL photonics
سال: 2021
ISSN: ['2378-0967']
DOI: https://doi.org/10.1063/5.0033459